MEMS Stress Sensor abstract
Strain Analysis of Silicon-on-Insulator Films
Silicon-on-Insulator (SOI) wafers produced by the Zone-Melting-Recrystallization (ZMR) method were evaluated to determine the level of built-in strain. Micromechanical strain measurement structures were produced by surface micromachining the thin film silicon epitaxial layer. A variety of test structures and a new tensile starin measurement device developed at Northeastern University were used to determine the level of strain in the material. Results indicated that the maximum strain in the ZMR material is less than 2x10-4, but there exists a significant orientation dependence.
Produced by Zone Melting Recrystallizatioon
P.M. Zavracky, G.G. Adams, and P.D. Aquilino