Integretion of perovskite ferroelectrics by molecular beam epitaxy on hexagonal silicon carbide
There is a growing interest for the integration of functional oxides, such as ferroelectric barium titanate (BTO), on wide bandgap semiconductors, such as hexagonal silicon carbide (6H-SiC), for next generation, multifunctional electronic devices. We have recently deposited BTO by MBE on the MgO(111)/ SiC(0001) substrate.  The BTO grows as an oriented (111) film, while BTO deposited under the same conditions on cleaned SiC produces an amorphous film of BTO. This demonstrates the potential of MgO as an interlayer to align more complex oxides. Figure 1 shows this RHEED pattern progression and the inset x-ray photoelectron spectroscopy Ti 2p peak shows the proper 4+ bonding state of the Ti.